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| L&S BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS (TC= 25 C unless otherwise noted) SYMBOLS VDSX VGDX VGSX IDS IGS PT TCH TSTG PARAMETERS Drain to Source Voltage Gate to Drain Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature UNITS V V V A mA W C C RATINGS 15 -18 -12 4.5 25 25 175 -65 to +175 FEATURES * HIGH OUTPUT POWER: 4 W * HIGH LINEAR GAIN: 11.5 dB * HIGH EFFICIENCY (PAE): 45% * INDUSTRY STANDARD PACKAGING DESCRIPTION The NE6500496 is a medium power GaAs MESFET designed for up to a 4 W output stage or as a driver for high power devices. The device has no internal matching and can be used from UHF frequencies up to 3.0 GHz. The chips used in this series offer superior reliability and consistent performance for which NEC microwave semiconductors are known. The NE6500496 Transistors are manufactured to NEC's stringent quality assurance standards to ensure highest reliability and consistent superior performance. OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 96 5.20.3 1.00.1 4.0 MIN BOTH LEADS Gate 2.20.2 4.30.2 RECOMMENDED OPERATING LIMITS SYMBOLS VDS TCH GCOMP RG PARAMETERS Drain to Source Voltage Channel Temperature Gain Compression Gate Resistance UNITS MIN V C dB TYP MAX 10 10 130 3.0 200 +.06 0.1 -.02 0.2 MAX 1.70.15 6.00.2 1.2 0.60.1 5.20.3 11.00.15 15.00.3 Source Drain 4.00.1 5.0 MAX ELECTRICAL CHARACTERISTICS (TC PART NUMBER SYMBOLS CHARACTERISTICS Power Out at Fixed Input Power Linear Gain Power Added Efficiency Drain Source Current Saturated Drain Current Pinch-off Voltage Transconductance Thermal Resistance = 25C) NE6500496 UNITS dBm dB % A A V mS C/W 1.0 -3.5 MIN 35.5 11.0 TYP 36.0 11.5 45 0.8 2.3 -2.0 1300 5.0 6.0 3.5 -0.5 VDS = 2.5 V; VGS = 0 V VDS = 2.5 V; IDS = 15 mA VDS = 2.5 V; IDS = 1 mA Channel to Case MAX TEST CONDITIONS PIN = 26.0 dBm VDS = 10 V; IDSQ = 400 mA f = 2.3 GHz; RG = 200 Functional Characteristics POUT GL ADD IDS Electrical DC Characteristics IDSS VP gm RTH California Eastern Laboratories NE6500496 TYPICAL SCATTERING PARAMETERS (TA = 25 C) +90 j 100 j 50 j 25 S11 4.05 GHz S22 4.05 GHz +120 S21 0.1 GHz +150 +60 j10 +30 S12 5.1 GHz 0 180 S22 0.05 GHz S21 5.1 GHz S12 0.1 GHz 0 -j 10 -150 -30 -j 25 -j 50 S11 0.05 GHz -j 100 -120 -90 -60 S21 MAG: 4.0 / DIV., 20.0 FS S12 MAG: 0.02 / DIV., 0.1 FS VDS = 10.0 V, IDS = 400 mA FREQUENCY (GHz) 0.10 0.20 0.40 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 MAG 0.975 0.956 0.949 0.947 0.945 0.944 0.944 0.944 0.945 0.947 0.950 0.940 0.933 S11 ANG -80.100 -118.900 -148.400 -155.300 -171.200 -178.200 176.800 172.700 168.700 165.000 160.500 155.300 149.600 MAG 17.360 11.506 6.420 5.212 2.691 1.834 1.408 1.166 1.008 0.901 0.838 0.806 0.792 S21 ANG 137.500 116.500 98.700 93.800 77.900 66.500 55.800 46.200 36.900 28.700 20.000 10.900 0.400 MAG 0.011 0.015 0.016 0.017 0.019 0.022 0.026 0.031 0.039 0.046 0.056 0.059 0.068 S12 ANG 55.300 39.800 28.900 26.700 32.400 38.500 43.400 46.000 46.700 47.000 41.300 37.300 34.000 MAG 0.601 0.657 0.687 0.692 0.702 0.708 0.712 0.728 0.753 0.761 0.769 0.775 0.791 S22 ANG -172.500 -175.000 -179.500 178.900 173.300 168.900 163.500 157.900 152.900 149.200 144.600 138.600 131.200 0.131 0.230 0.369 0.426 0.763 0.968 1.076 1.086 0.986 0.921 0.771 0.812 0.772 K MAG1 (dB) 31.982 28.848 26.034 24.866 21.512 19.210 15.651 13.965 14.124 12.920 11.751 11.355 10.662 Note: 1. Gain Calculations: MAG = |S21| |S12| (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM 10/16/2000 DATA SUBJECT TO CHANGE WITHOUT NOTICE |
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